SI3900DV-T1-GE3

SI3900DV-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 20V 2A 6-TSOP

Specifications

  • Series
    TrenchFET®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    2A
  • Rds On (Max) @ Id, Vgs
    125mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Power - Max
    830mW
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package
    6-TSOP

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In Stock 20492
Quantity:
Unit Price (Reference Price):
1.02000
Target price:
Total:1.02000

Datasheet