SI4900DY-T1-GE3

SI4900DY-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 60V 5.3A 8-SOIC

Specifications

  • Series
    TrenchFET®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    60V
  • Current - Continuous Drain (Id) @ 25°C
    5.3A
  • Rds On (Max) @ Id, Vgs
    58mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    665pF @ 15V
  • Power - Max
    3.1W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SO

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In Stock 16106
Quantity:
Unit Price (Reference Price):
1.31000
Target price:
Total:1.31000

Datasheet