SI8441DB-T2-E1

SI8441DB-T2-E1

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET P-CH 20V 10.5A 6MICROFOOT

Specifications

  • Series
    TrenchFET®
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    1.2V, 4.5V
  • Rds On (Max) @ Id, Vgs
    80mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    13 nC @ 5 V
  • Vgs (Max)
    ±5V
  • Input Capacitance (Ciss) (Max) @ Vds
    600 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    2.77W (Ta), 13W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    6-Micro Foot™ (1.5x1)
  • Package / Case
    6-UFBGA

SI8441DB-T2-E1 Request a Quote

In Stock 33267
Quantity:
Unit Price (Reference Price):
0.61600
Target price:
Total:0.61600

Datasheet