SIAA00DJ-T1-GE3

SIAA00DJ-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 25V 20.1A/40A PPAK

Specifications

  • Series
    TrenchFET® Gen IV
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    25 V
  • Current - Continuous Drain (Id) @ 25°C
    20.1A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    5.6mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    24 nC @ 10 V
  • Vgs (Max)
    +16V, -12V
  • Input Capacitance (Ciss) (Max) @ Vds
    1090 pF @ 12.5 V
  • FET Feature
    -
  • Power Dissipation (Max)
    3.5W (Ta), 19.2W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PowerPAK® SC-70-6 Single
  • Package / Case
    PowerPAK® SC-70-6

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In Stock 37844
Quantity:
Unit Price (Reference Price):
0.27072
Target price:
Total:0.27072

Datasheet