SIZ200DT-T1-GE3

SIZ200DT-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET N-CH DUAL 30V

Specifications

  • Series
    TrenchFET® Gen IV
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    30V
  • Current - Continuous Drain (Id) @ 25°C
    22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
  • Rds On (Max) @ Id, Vgs
    5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    28nC @ 10V, 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1510pF @ 15V, 1600pF @ 15V
  • Power - Max
    4.3W (Ta), 33W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Supplier Device Package
    8-PowerPair® (3.3x3.3)

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In Stock 19505
Quantity:
Unit Price (Reference Price):
1.08000
Target price:
Total:1.08000

Datasheet