SIZF906DT-T1-GE3

SIZF906DT-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2 N-CH 30V 60A POWERPAIR

Specifications

  • Series
    TrenchFET® Gen IV
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Half Bridge)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    30V
  • Current - Continuous Drain (Id) @ 25°C
    60A (Tc)
  • Rds On (Max) @ Id, Vgs
    3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 4.5V, 92nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    2000pF @ 15V, 8200pF @ 15V
  • Power - Max
    38W (Tc), 83W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TA)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Supplier Device Package
    8-PowerPair® (6x5)

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In Stock 12286
Quantity:
Unit Price (Reference Price):
1.75000
Target price:
Total:1.75000

Datasheet