SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET P-CH 20V 3.9A TO236

Specifications

  • Series
    Automotive, AEC-Q101, TrenchFET®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    3.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs
    120mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    8 nC @ 4.5 V
  • Vgs (Max)
    ±8V
  • Input Capacitance (Ciss) (Max) @ Vds
    425 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    3W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TA)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    TO-236 (SOT-23)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3

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In Stock 22584
Quantity:
Unit Price (Reference Price):
0.46000
Target price:
Total:0.46000

Datasheet