Specifications

• Series
  C3M™
• Package
  Tube
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)
  1200 V
• Current - Continuous Drain (Id) @ 25°C
  100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  15V
• Rds On (Max) @ Id, Vgs
  28.8mOhm @ 50A, 15V
• Vgs(th) (Max) @ Id
  3.6V @ 17.7mA
• Gate Charge (Qg) (Max) @ Vgs
  162 nC @ 15 V
• Vgs (Max)
  +15V, -4V
• Input Capacitance (Ciss) (Max) @ Vds
  4818 pF @ 1000 V
• FET Feature
  -
• Power Dissipation (Max)
  469W (Tc)
• Operating Temperature
  -40°C ~ 175°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-247-4L
• Package / Case
  TO-247-4