Specifications

• Series
  -
• Package
  Box
• Part Status
  Active
• FET Type
  2 N-Channel (Dual)
• FET Feature
  Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss)
  1200V
• Current - Continuous Drain (Id) @ 25°C
  395A (Tc)
• Rds On (Max) @ Id, Vgs
  5.3mOhm @ 400A, 15V
• Vgs(th) (Max) @ Id
  3.6V @ 92mA
• Gate Charge (Qg) (Max) @ Vgs
  908nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds
  2450pF @ 800V
• Power - Max
  -
• Operating Temperature
  -40°C ~ 175°C (TJ)
• Mounting Type
  Chassis Mount
• Package / Case
  Module
• Supplier Device Package
  -