Specifications

• Series
  Z-FET™
• Package
  Bulk
• Part Status
  Active
• FET Type
  2 N-Channel (Half Bridge)
• FET Feature
  Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss)
  1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C
  423A (Tc)
• Rds On (Max) @ Id, Vgs
  5.7mOhm @ 300A, 20V
• Vgs(th) (Max) @ Id
  2.3V @ 15mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs
  1025nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds
  11700pF @ 600V
• Power - Max
  1660W
• Operating Temperature
  150°C (TJ)
• Mounting Type
  Chassis Mount
• Package / Case
  Module, Screw Terminals
• Supplier Device Package
  Module