Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Active
• FET Type
  2 N-Channel (Half Bridge)
• FET Feature
  Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss)
  1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C
  468A (Tc)
• Rds On (Max) @ Id, Vgs
  4.25mOhm @ 400A, 15V
• Vgs(th) (Max) @ Id
  3.6V @ 106mA
• Gate Charge (Qg) (Max) @ Vgs
  1040nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds
  29700pF @ 800V
• Power - Max
  -
• Operating Temperature
  -40°C ~ 175°C (TJ)
• Mounting Type
  Chassis Mount
• Package / Case
  Module
• Supplier Device Package
  Module