ALD1110EPAL

ALD1110EPAL

Manufacturer

Advanced Linear Devices, Inc.

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 10V 8DIP

Specifications

  • Series
    EPAD®
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual) Matched Pair
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    -
  • Rds On (Max) @ Id, Vgs
    500Ohm @ 5V
  • Vgs(th) (Max) @ Id
    1.01V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs
    -
  • Input Capacitance (Ciss) (Max) @ Vds
    2.5pF @ 5V
  • Power - Max
    600mW
  • Operating Temperature
    0°C ~ 70°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    8-DIP (0.300", 7.62mm)
  • Supplier Device Package
    8-PDIP

ALD1110EPAL Request a Quote

In Stock 7875
Quantity:
Unit Price (Reference Price):
7.14840
Target price:
Total:7.14840

Datasheet