Specifications

• Series
  EPAD®
• Package
  Tube
• Part Status
  Active
• FET Type
  2 N-Channel (Dual) Matched Pair
• FET Feature
  Depletion Mode
• Drain to Source Voltage (Vdss)
  10.6V
• Current - Continuous Drain (Id) @ 25°C
  12mA, 3mA
• Rds On (Max) @ Id, Vgs
  540Ohm @ 0V
• Vgs(th) (Max) @ Id
  3.45V @ 1µA
• Gate Charge (Qg) (Max) @ Vgs
  -
• Input Capacitance (Ciss) (Max) @ Vds
  2.5pF @ 5V
• Power - Max
  500mW
• Operating Temperature
  0°C ~ 70°C (TJ)
• Mounting Type
  Surface Mount
• Package / Case
  8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package
  8-SOIC