Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Obsolete
• Transistor Type
  NPN
• Voltage - Collector Emitter Breakdown (Max)
  12V
• Frequency - Transition
  8GHz
• Noise Figure (dB Typ @ f)
  1.3dB ~ 3dB @ 1GHz ~ 4GHz
• Gain
  10dB ~ 18.5dB
• Power - Max
  500mW
• DC Current Gain (hFE) (Min) @ Ic, Vce
  30 @ 10mA, 8V
• Current - Collector (Ic) (Max)
  60mA
• Operating Temperature
  150°C (TJ)
• Mounting Type
  Surface Mount
• Package / Case
  4-SMD (35 micro-X)
• Supplier Device Package
  35 micro-X