Specifications

• Series
  -
• Package
  Tray
• Part Status
  Obsolete
• Transistor Type
  NPN
• Voltage - Collector Emitter Breakdown (Max)
  12V
• Frequency - Transition
  9GHz
• Noise Figure (dB Typ @ f)
  1.9dB ~ 3dB @ 2GHz ~ 4GHz
• Gain
  10.5dB ~ 14dB
• Power - Max
  600mW
• DC Current Gain (hFE) (Min) @ Ic, Vce
  30 @ 35mA, 8V
• Current - Collector (Ic) (Max)
  80mA
• Operating Temperature
  200°C (TJ)
• Mounting Type
  Surface Mount
• Package / Case
  Die
• Supplier Device Package
  Chip