NE662M04-A

NE662M04-A

Manufacturer

CEL (California Eastern Laboratories)

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS NPN 3.3V 25GHZ SOT343F

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    3.3V
  • Frequency - Transition
    25GHz
  • Noise Figure (dB Typ @ f)
    1.1dB @ 2GHz
  • Gain
    18dB
  • Power - Max
    115mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 5mA, 2V
  • Current - Collector (Ic) (Max)
    35mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-343F
  • Supplier Device Package
    SOT-343F

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Datasheet