NE85633-T1B

NE85633-T1B

Manufacturer

CEL (California Eastern Laboratories)

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS NPN 12V 7GHZ SOT23

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Frequency - Transition
    7GHz
  • Noise Figure (dB Typ @ f)
    1.4dB ~ 2dB @ 1GHz
  • Gain
    9dB
  • Power - Max
    200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 20mA, 10V
  • Current - Collector (Ic) (Max)
    100mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23

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Datasheet