Specifications

• Series
  -
• Package
  Tape & Reel (TR)
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  30 V
• Current - Continuous Drain (Id) @ 25°C
  3.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  1.8V, 8V
• Rds On (Max) @ Id, Vgs
  60mOhm @ 500mA, 8V
• Vgs(th) (Max) @ Id
  1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  1.677 nC @ 4.5 V
• Vgs (Max)
  ±12V
• Input Capacitance (Ciss) (Max) @ Vds
  192 pF @ 15 V
• FET Feature
  -
• Power Dissipation (Max)
  790mW
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  X4-DSN1006-3
• Package / Case
  3-XFDFN