EPC2102

EPC2102

Manufacturer

EPC

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

GAN TRANS SYMMETRICAL HALF BRIDG

Specifications

  • Series
    eGaN®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Half Bridge)
  • FET Feature
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    60V
  • Current - Continuous Drain (Id) @ 25°C
    23A
  • Rds On (Max) @ Id, Vgs
    4.4mOhm @ 20A, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs
    6.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds
    830pF @ 30V
  • Power - Max
    -
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    Die
  • Supplier Device Package
    Die

EPC2102 Request a Quote

In Stock 7146
Quantity:
Unit Price (Reference Price):
8.01000
Target price:
Total:8.01000

Datasheet