EPC8009

EPC8009

Manufacturer

EPC

Product Category

Transistors - FETs, MOSFETs - Single

Description

GANFET N-CH 65V 2.7A DIE

Specifications

  • Series
    eGaN®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    65 V
  • Current - Continuous Drain (Id) @ 25°C
    2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Rds On (Max) @ Id, Vgs
    130mOhm @ 500mA, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    0.45 nC @ 5 V
  • Vgs (Max)
    +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds
    52 pF @ 32.5 V
  • FET Feature
    -
  • Power Dissipation (Max)
    -
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    Die
  • Package / Case
    Die

EPC8009 Request a Quote

In Stock 10454
Quantity:
Unit Price (Reference Price):
3.15000
Target price:
Total:3.15000

Datasheet