Specifications

• Series
  HEXFET®
• Package
  Tube
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  55 V
• Current - Continuous Drain (Id) @ 25°C
  75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  10V
• Rds On (Max) @ Id, Vgs
  6.5mOhm @ 66A, 10V
• Vgs(th) (Max) @ Id
  4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  110 nC @ 10 V
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  3450 pF @ 25 V
• FET Feature
  -
• Power Dissipation (Max)
  170W (Tc)
• Operating Temperature
  -55°C ~ 175°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-262
• Package / Case
  TO-262-3 Long Leads, I²Pak, TO-262AA