Specifications

• Series
  BIMOSFET™
• Package
  Tube
• Part Status
  Not For New Designs
• IGBT Type
  -
• Voltage - Collector Emitter Breakdown (Max)
  3600 V
• Current - Collector (Ic) (Max)
  70 A
• Current - Collector Pulsed (Icm)
  420 A
• Vce(on) (Max) @ Vge, Ic
  2.9V @ 15V, 50A
• Power - Max
  290 W
• Switching Energy
  -
• Input Type
  Standard
• Gate Charge
  210 nC
• Td (on/off) @ 25°C
  46ns/205ns
• Test Condition
  960V, 50A, 5Ohm, 15V
• Reverse Recovery Time (trr)
  1.7 µs
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Package / Case
  i4-Pac™-5 (3 Leads)
• Supplier Device Package
  ISOPLUS i4-PAC™