Specifications

• Series
  BIMOSFET™
• Package
  Bulk
• Part Status
  Active
• IGBT Type
  -
• Voltage - Collector Emitter Breakdown (Max)
  1700 V
• Current - Collector (Ic) (Max)
  16 A
• Current - Collector Pulsed (Icm)
  40 A
• Vce(on) (Max) @ Vge, Ic
  6V @ 15V, 10A
• Power - Max
  150 W
• Switching Energy
  1.2mJ (off)
• Input Type
  Standard
• Gate Charge
  65 nC
• Td (on/off) @ 25°C
  15ns/160ns
• Test Condition
  1360V, 10A, 10Ohm, 15V
• Reverse Recovery Time (trr)
  360 ns
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Package / Case
  TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package
  TO-268