Specifications

• Series
  BIMOSFET™
• Package
  Tube
• Part Status
  Not For New Designs
• IGBT Type
  -
• Voltage - Collector Emitter Breakdown (Max)
  3600 V
• Current - Collector (Ic) (Max)
  70 A
• Current - Collector Pulsed (Icm)
  220 A
• Vce(on) (Max) @ Vge, Ic
  3.4V @ 15V, 20A
• Power - Max
  430 W
• Switching Energy
  15.5mJ (on), 4.3mJ (off)
• Input Type
  Standard
• Gate Charge
  110 nC
• Td (on/off) @ 25°C
  18ns/238ns
• Test Condition
  1500V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr)
  1.7 µs
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Package / Case
  TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package
  TO-268