Specifications

• Series
  -
• Package
  Tube
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)
  700 V
• Current - Continuous Drain (Id) @ 25°C
  25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  -
• Vgs(th) (Max) @ Id
  -
• Gate Charge (Qg) (Max) @ Vgs
  -
• Vgs (Max)
  -
• Input Capacitance (Ciss) (Max) @ Vds
  -
• FET Feature
  -
• Power Dissipation (Max)
  -
• Operating Temperature
  -55°C ~ 175°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  D3Pak
• Package / Case
  TO-268-3, D³Pak (2 Leads + Tab), TO-268AA