Specifications

• Series
  -
• Package
  Tube
• Part Status
  Active
• FET Type
  6 N-Channel (3-Phase Bridge)
• FET Feature
  Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss)
  1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C
  171A (Tc)
• Rds On (Max) @ Id, Vgs
  16mOhm @ 80A, 20V
• Vgs(th) (Max) @ Id
  2.8V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs
  464nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds
  6040pF @ 1000V
• Power - Max
  728W (Tc)
• Operating Temperature
  -40°C ~ 175°C (TJ)
• Mounting Type
  Chassis Mount
• Package / Case
  Module
• Supplier Device Package
  SP6-P