NTE16003

NTE16003

Manufacturer

NTE Electronics, Inc.

Product Category

Transistors - Bipolar (BJT) - RF

Description

T-NPN SI RF PO=7.5 WATTS

RFQ Email: [email protected] or Inquires online

Specifications

  • Series
    -
  • Package
    Bag
  • Part Status
    Active
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Frequency - Transition
    500MHz
  • Noise Figure (dB Typ @ f)
    -
  • Gain
    -
  • Power - Max
    11.6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    -
  • Current - Collector (Ic) (Max)
    1.5A
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Stud Mount
  • Package / Case
    TO-212MA, TO-210AB, TO-60-4, Stud
  • Supplier Device Package
    TO-60

NTE16003 Request a Quote

In Stock 1961
Quantity:
Unit Price (Reference Price):
45.38000
Target price:
Total:45.38000