Specifications

• Series
  -
• Package
  Bag
• Part Status
  Active
• Transistor Type
  NPN
• Voltage - Collector Emitter Breakdown (Max)
  25V
• Frequency - Transition
  1.1GHz
• Noise Figure (dB Typ @ f)
  -
• Gain
  -
• Power - Max
  350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce
  25 @ 4mA, 4V
• Current - Collector (Ic) (Max)
  50mA
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Package / Case
  TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package
  TO-92