BFG35,115

BFG35,115

Manufacturer

NXP Semiconductors

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS NPN 18V 4GHZ SOT223

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    18V
  • Frequency - Transition
    4GHz
  • Noise Figure (dB Typ @ f)
    -
  • Gain
    -
  • Power - Max
    1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    25 @ 100mA, 10V
  • Current - Collector (Ic) (Max)
    150mA
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Supplier Device Package
    SOT-223

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Datasheet