BFU660F,115

BFU660F,115

Manufacturer

NXP Semiconductors

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS NPN 5.5V 21GHZ 4DFP

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    5.5V
  • Frequency - Transition
    21GHz
  • Noise Figure (dB Typ @ f)
    0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
  • Gain
    12dB ~ 21dB
  • Power - Max
    225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    90 @ 10mA, 2V
  • Current - Collector (Ic) (Max)
    60mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-343F
  • Supplier Device Package
    4-DFP

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In Stock 35411
Quantity:
Unit Price (Reference Price):
0.58000
Target price:
Total:0.58000

Datasheet