Specifications

• Series
  -
• Package
  Tape & Box (TB)
• Part Status
  Obsolete
• FET Type
  N-Channel
• Voltage - Breakdown (V(BR)GSS)
  25 V
• Drain to Source Voltage (Vdss)
  25 V
• Current - Drain (Idss) @ Vds (Vgs=0)
  80 mA @ 15 V
• Current Drain (Id) - Max
  -
• Voltage - Cutoff (VGS off) @ Id
  2 V @ 1 µA
• Input Capacitance (Ciss) (Max) @ Vds
  30pF @ 10V (VGS)
• Resistance - RDS(On)
  12 Ohms
• Power - Max
  400 mW
• Operating Temperature
  150°C (TJ)
• Mounting Type
  Through Hole
• Package / Case
  TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package
  TO-92-3