2SK3666-3-TB-E

2SK3666-3-TB-E

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - JFETs

Description

JFET N-CH 10MA 200MW 3CP

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Voltage - Breakdown (V(BR)GSS)
    -
  • Drain to Source Voltage (Vdss)
    30 V
  • Current - Drain (Idss) @ Vds (Vgs=0)
    1.2 mA @ 10 V
  • Current Drain (Id) - Max
    10 mA
  • Voltage - Cutoff (VGS off) @ Id
    180 mV @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds
    4pF @ 10V
  • Resistance - RDS(On)
    200 Ohms
  • Power - Max
    200 mW
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    3-CP

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In Stock 22209
Quantity:
Unit Price (Reference Price):
0.47000
Target price:
Total:0.47000

Datasheet