Specifications

• Series
  -
• Package
  Tape & Box (TB)
• Part Status
  Obsolete
• Transistor Type
  NPN
• Voltage - Collector Emitter Breakdown (Max)
  25V
• Frequency - Transition
  1.1GHz
• Noise Figure (dB Typ @ f)
  -
• Gain
  -
• Power - Max
  350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce
  38 @ 7mA, 10V
• Current - Collector (Ic) (Max)
  50mA
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Package / Case
  TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package
  TO-92-3