FJN4301RBU

FJN4301RBU

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

TRANS PREBIAS PNP 300MW TO92-3

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    PNP - Pre-Biased
  • Current - Collector (Ic) (Max)
    100 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    4.7 kOhms
  • Resistor - Emitter Base (R2)
    4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Frequency - Transition
    200 MHz
  • Power - Max
    300 mW
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package
    TO-92-3

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