Specifications

• Series
  -
• Package
  Tape & Box (TB)
• Part Status
  Obsolete
• FET Type
  N-Channel
• Voltage - Breakdown (V(BR)GSS)
  20 V
• Drain to Source Voltage (Vdss)
  -
• Current - Drain (Idss) @ Vds (Vgs=0)
  100 µA @ 5 V
• Current Drain (Id) - Max
  1 mA
• Voltage - Cutoff (VGS off) @ Id
  600 mV @ 1 µA
• Input Capacitance (Ciss) (Max) @ Vds
  3.5pF @ 5V
• Resistance - RDS(On)
  -
• Power - Max
  150 mW
• Operating Temperature
  150°C (TJ)
• Mounting Type
  Through Hole
• Package / Case
  TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package
  TO-92-3