MUN5231DW1T1G

MUN5231DW1T1G

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

TRANS 2NPN PREBIAS 0.25W SOT363

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max)
    100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    2.2kOhms
  • Resistor - Emitter Base (R2)
    2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    8 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    -
  • Power - Max
    250mW
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    SC-88/SC70-6/SOT-363

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In Stock 223384
Quantity:
Unit Price (Reference Price):
0.04494
Target price:
Total:0.04494

Datasheet