NSVIMD10AMT1G

NSVIMD10AMT1G

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

SURF MT BIASED RES XSTR

Specifications

  • Series
    Automotive, AEC-Q101
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max)
    500mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    13kOhms, 130Ohms
  • Resistor - Emitter Base (R2)
    10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1mA, 5V / 68 @ 100mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    -
  • Power - Max
    285mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package
    SC-74R

NSVIMD10AMT1G Request a Quote

In Stock 21357
Quantity:
Unit Price (Reference Price):
0.49000
Target price:
Total:0.49000

Datasheet