UNR52A8G0L

UNR52A8G0L

Manufacturer

Panasonic

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

TRANS PREBIAS NPN 150MW SMINI3

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Obsolete
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    80 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    510 Ohms
  • Resistor - Emitter Base (R2)
    5.1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    150 MHz
  • Power - Max
    150 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-85
  • Supplier Device Package
    SMini3-F2

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In Stock 100997
Quantity:
Unit Price (Reference Price):
0.10000
Target price:
Total:0.10000

Datasheet