4MN10CH-TL-E

4MN10CH-TL-E

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

BIP NPN 0.1A 200V

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    200V
  • Frequency - Transition
    400MHz
  • Noise Figure (dB Typ @ f)
    -
  • Gain
    -
  • Power - Max
    600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 10mA, 10V
  • Current - Collector (Ic) (Max)
    100mA
  • Operating Temperature
    -
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-96
  • Supplier Device Package
    3-CPH

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In Stock 72309
Quantity:
Unit Price (Reference Price):
0.14000
Target price:
Total:0.14000