BFR181E6327

BFR181E6327

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

LOW-NOISE TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Frequency - Transition
    8GHz
  • Noise Figure (dB Typ @ f)
    0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain
    18.5dB
  • Power - Max
    175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA, 8V
  • Current - Collector (Ic) (Max)
    20mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3

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In Stock 143679
Quantity:
Unit Price (Reference Price):
0.07000
Target price:
Total:0.07000