BSP135L6906HTSA1

BSP135L6906HTSA1

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 600V 120MA SOT223-4

Specifications

  • Series
    SIPMOS®
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    0V, 10V
  • Rds On (Max) @ Id, Vgs
    45Ohm @ 120mA, 10V
  • Vgs(th) (Max) @ Id
    1V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs
    4.9 nC @ 5 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    146 pF @ 25 V
  • FET Feature
    Depletion Mode
  • Power Dissipation (Max)
    1.8W (Ta)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-SOT223-4
  • Package / Case
    TO-261-4, TO-261AA

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In Stock 30742
Quantity:
Unit Price (Reference Price):
0.67000
Target price:
Total:0.67000

Datasheet