BUK9E4R9-60E,127

BUK9E4R9-60E,127

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 60V 100A I2PAK

Specifications

  • Series
    TrenchMOS™
  • Package
    Tube
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Rds On (Max) @ Id, Vgs
    4.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    65 nC @ 5 V
  • Vgs (Max)
    ±10V
  • Input Capacitance (Ciss) (Max) @ Vds
    9.71 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    234W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    I2PAK
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA

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In Stock 28751
Quantity:
Unit Price (Reference Price):
0.72000
Target price:
Total:0.72000