DCD010-TB-E

DCD010-TB-E

Manufacturer

Rochester Electronics

Product Category

Diodes - Rectifiers - Arrays

Description

SILICON EPITAXIAL DIODE

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Diode Configuration
    1 Pair Series Connection
  • Diode Type
    Standard
  • Voltage - DC Reverse (Vr) (Max)
    20 V
  • Current - Average Rectified (Io) (per Diode)
    100mA
  • Voltage - Forward (Vf) (Max) @ If
    1 V @ 10 mA
  • Speed
    Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr)
    -
  • Current - Reverse Leakage @ Vr
    100 nA @ 15 V
  • Operating Temperature - Junction
    125°C (Max)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    3-CP

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In Stock 200825
Quantity:
Unit Price (Reference Price):
0.05000
Target price:
Total:0.05000

Datasheet