DF200R12PT4B6BOSA1

DF200R12PT4B6BOSA1

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Modules

Description

DFXR12P - IGBT MODULE

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Configuration
    Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max)
    1.2 V
  • Current - Collector (Ic) (Max)
    300 A
  • Power - Max
    1.1 W
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 200A
  • Current - Collector Cutoff (Max)
    15 µA
  • Input Capacitance (Cies) @ Vce
    12.5 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    Yes
  • Operating Temperature
    -40°C ~ 150°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module

DF200R12PT4B6BOSA1 Request a Quote

In Stock 1190
Quantity:
Unit Price (Reference Price):
166.67000
Target price:
Total:166.67000

Datasheet