EC4H09C-TL-H

EC4H09C-TL-H

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Last Time Buy
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    3.5V
  • Frequency - Transition
    26GHz
  • Noise Figure (dB Typ @ f)
    1.3dB @ 2GHz
  • Gain
    15dB
  • Power - Max
    120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA, 1V
  • Current - Collector (Ic) (Max)
    40mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    4-UFDFN
  • Supplier Device Package
    4-ECSP1008

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In Stock 32615
Quantity:
Unit Price (Reference Price):
0.63000
Target price:
Total:0.63000

Datasheet