ECH8601M-TL-H

ECH8601M-TL-H

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

N-CHANNEL POWER MOSFET

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    2 N-Channel (Dual) Common Drain
  • FET Feature
    Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss)
    24V
  • Current - Continuous Drain (Id) @ 25°C
    8A (Ta)
  • Rds On (Max) @ Id, Vgs
    23mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Power - Max
    -
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SMD, Flat Lead
  • Supplier Device Package
    8-ECH

ECH8601M-TL-H Request a Quote

In Stock 59640
Quantity:
Unit Price (Reference Price):
0.17000
Target price:
Total:0.17000

Datasheet