ECH8653-TL-H

ECH8653-TL-H

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

POWER FIELD-EFFECT TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    7.5A
  • Rds On (Max) @ Id, Vgs
    20mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id
    -
  • Gate Charge (Qg) (Max) @ Vgs
    18.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds
    1280pF @ 10V
  • Power - Max
    1.5W
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SMD, Flat Lead
  • Supplier Device Package
    8-ECH

ECH8653-TL-H Request a Quote

In Stock 34179
Quantity:
Unit Price (Reference Price):
0.30000
Target price:
Total:0.30000

Datasheet