EMZ1DXV6T1G

EMZ1DXV6T1G

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays

Description

SMALL SIGNAL BIPOLAR TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    NPN, PNP
  • Current - Collector (Ic) (Max)
    100mA
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max)
    500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA, 6V
  • Power - Max
    500mW
  • Frequency - Transition
    180MHz, 140MHz
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Supplier Device Package
    SOT-563

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In Stock 250949
Quantity:
Unit Price (Reference Price):
0.04000
Target price:
Total:0.04000

Datasheet