FD6M043N08

FD6M043N08

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

N-CHANNEL POWER MOSFET

Specifications

  • Series
    Power-SPM™
  • Package
    Tube
  • Part Status
    Obsolete
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    75V
  • Current - Continuous Drain (Id) @ 25°C
    65A
  • Rds On (Max) @ Id, Vgs
    4.3mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    148nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    6180pF @ 25V
  • Power - Max
    -
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    EPM15
  • Supplier Device Package
    EPM15

FD6M043N08 Request a Quote

In Stock 8381
Quantity:
Unit Price (Reference Price):
6.64000
Target price:
Total:6.64000

Datasheet