FDB14AN06LA0

FDB14AN06LA0

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 60V 10A/67A TO263AB

Specifications

  • Series
    PowerTrench®
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    10A (Ta), 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Rds On (Max) @ Id, Vgs
    11.6mOhm @ 67A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    31 nC @ 5 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    2.9 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    125W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    TO-263AB
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock 19689
Quantity:
Unit Price (Reference Price):
1.07000
Target price:
Total:1.07000

Datasheet